Title :
Atomic Scale Strain Measurement for Nanoelectronic Devices
Author :
Chih Hang Tung ; Kin Leong Pey ; Fu Qinrong ; Fox, Brendan
Author_Institution :
lnst.of Microelectron.
Abstract :
Atomic scale lattice strain measurement using high resolution transmission electron microscopic (HR- TEM) is an important application for semiconductor device characterization. Recent advancement and issues in these areas are discussed. Their potential applications in contemporary sub-45 nm metal-oxide- semiconductor field effect transistor (MOSFET) technology nodes are crucial. Major technical limitation in using these characterization techniques in wafer production environment is discussed and solution proposed.
Keywords :
MOSFET; nanoelectronics; strain measurement; transmission electron microscopy; atomic scale lattice strain measurement; high resolution transmission electron microscopic; metal-oxide-semiconductor field effect transistor MOSFET technology nodes; nanoelectronic devices; semiconductor device; wafer production environment; Atomic measurements; Diffraction; Electrons; Lattices; MOSFET circuits; Nanoscale devices; Production; Silicon; Spatial resolution; Strain measurement;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007. 14th International Symposium on the
Conference_Location :
Bangalore
Print_ISBN :
978-1-4244-1014-9
DOI :
10.1109/IPFA.2007.4378052
