Title :
Blech Effect in Cu Interconnects with Oxide and Low-k Dielectrics
Author :
Yuejin Hou ; Cher Ming Tan
Author_Institution :
Nanyang Technol. Univ., Singapore
Abstract :
This paper investigates the mechanism of the temperature dependence of the Blech product for both the Cu/oxide and Cu/low-k interconnections. Using finite element modeling (FEM), we demonstrate that Blech product should be temperature dependent at high temperature if the inelastic behavior of Cu is considered. This inelastic behavior has not been taken into consideration in the previous works. The simulated Blech product is found to be consistent with the literature reported values.
Keywords :
copper; finite element analysis; integrated circuit interconnections; low-k dielectric thin films; Blech effect; copper interconnect; finite element modeling; inelastic behavior; low-k dielectrics; oxide dielectrics; temperature dependence mechanism; Cathodes; Copper; Dielectrics; Electrons; Finite element methods; Integrated circuit interconnections; Mechanical factors; Silicon compounds; Temperature dependence; Temperature distribution;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007. 14th International Symposium on the
Conference_Location :
Bangalore
Print_ISBN :
978-1-4244-1014-9
DOI :
10.1109/IPFA.2007.4378059
