Title :
Experimental Study of Charge Displacement in Nitride Layer and its Effect on Threshold Voltage Instability of Advanced Flash Memory Devices
Author :
Guoqiao Tao ; Som Nath ; Ouvrard, C. ; Chauveau, H. ; Dormans, D. ; Verhaar, R.
Author_Institution :
NXP Semicond., Nijmegen
Abstract :
The effect of charge displacement in nitride layer of ONO stack in scaled flash cells are experimentally studied by using gate stress measurements. The redistribution of charge is found to follow Poole-Frenkel conduction mechanisms. However, the measurements on scaled devices show significant random telegraph noise. The noise will be even more pronounced in future scaled devices.
Keywords :
Poole-Frenkel effect; flash memories; stress analysis; ONO stack; Poole Frenkel conduction mechanisms; advanced flash memory devices; charge displacement; gate stress measurements; nitride layer; scaled flash cells; threshold voltage instability; CMOS technology; Coupling circuits; Dielectric devices; Electron traps; Equivalent circuits; Flash memory; Nonvolatile memory; Semiconductor device noise; Stress; Threshold voltage; Charge conduction; NVMdata retention; RTN; charge re-distribution; multi-level Flash;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007. 14th International Symposium on the
Conference_Location :
Bangalore
Print_ISBN :
978-1-4244-1014-9
DOI :
10.1109/IPFA.2007.4378061
