• DocumentCode
    2017104
  • Title

    Proof-of-Concept Structure for Investigation of Successive Soft Gate Oxide Breakdowns in Two Dimensions

  • Author

    Kaczer, Ben ; Fernandez, Raul ; Nackaert, A. ; Chiarella, T. ; Groeseneken, Guido

  • Author_Institution
    Kapeldreef, Leuven
  • fYear
    2007
  • fDate
    11-13 July 2007
  • Abstract
    In this paper we describe a structure designed and fabricated for the purpose of locating successive SBD´s in 2D. It is shown that the original BD location method can be readily extended to 2D, for both accumulation (Degraeve et al., 2001) and inversion (Crupi et al., 2005). It is concluded that the locations of two successive SBD´s can be readily distinguished and that subsequent SBD events do not appear to be correlated within the analysis of this work. Limitations in downscaling the structure are also discussed.
  • Keywords
    MOSFET; semiconductor device breakdown; semiconductor device reliability; BD location; MOSFET; accumulation region; inversion region; proof-of-concept structure; successive soft gate oxide breakdowns; Acceleration; CMOS technology; Circuits; Electric breakdown; Electrons; FETs; Leakage current; Spontaneous emission; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007. 14th International Symposium on the
  • Conference_Location
    Bangalore
  • Print_ISBN
    978-1-4244-1014-9
  • Type

    conf

  • DOI
    10.1109/IPFA.2007.4378063
  • Filename
    4378063