DocumentCode
2017104
Title
Proof-of-Concept Structure for Investigation of Successive Soft Gate Oxide Breakdowns in Two Dimensions
Author
Kaczer, Ben ; Fernandez, Raul ; Nackaert, A. ; Chiarella, T. ; Groeseneken, Guido
Author_Institution
Kapeldreef, Leuven
fYear
2007
fDate
11-13 July 2007
Abstract
In this paper we describe a structure designed and fabricated for the purpose of locating successive SBD´s in 2D. It is shown that the original BD location method can be readily extended to 2D, for both accumulation (Degraeve et al., 2001) and inversion (Crupi et al., 2005). It is concluded that the locations of two successive SBD´s can be readily distinguished and that subsequent SBD events do not appear to be correlated within the analysis of this work. Limitations in downscaling the structure are also discussed.
Keywords
MOSFET; semiconductor device breakdown; semiconductor device reliability; BD location; MOSFET; accumulation region; inversion region; proof-of-concept structure; successive soft gate oxide breakdowns; Acceleration; CMOS technology; Circuits; Electric breakdown; Electrons; FETs; Leakage current; Spontaneous emission; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007. 14th International Symposium on the
Conference_Location
Bangalore
Print_ISBN
978-1-4244-1014-9
Type
conf
DOI
10.1109/IPFA.2007.4378063
Filename
4378063
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