A 1.5V, 140µA CMOS ultra-low power common-gate LNA

Author

Jeong, C.J. ; Qu, W. ; Sun, Y. ; Yoon, D.Y. ; Han, S.K. ; Lee, S.G.

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea

fYear

2011

fDate

5-7 June 2011

Firstpage

1

Lastpage

4

Abstract

This paper presents design guidelines for ultra-low power Low Noise Amplifier (LNA) design by comparing input matching, gain, and noise figure (NF) characteristics of common-source (CS) and common-gate (CG) topologies. A current-reused ultra-low power 2.2 GHz CG LNA is proposed and implemented based on 0.18 um CMOS technology. Measurement results show 13.9 dB power gain, 5.14 dB NF, and -9.3 dBm IIP3, respectively, while dissipating 140 uA from a 1.5 V supply, which shows best figure of merit (FOM) among all published ultra-low power LNAs.

Keywords

CMOS analogue integrated circuits; amplification; low noise amplifiers; low-power electronics; network topology; CMOS technology; CMOS ultra low power common-gate LNA; common-gate topology; common-source topology; current 140 muA; current-reused ultra low power CG LNA; frequency 2.2 GHz; gain; gain 13.9 dB; input matching; low noise amplifier design; noise figure 5.14 dB; noise figure characteristics; size 0.18 mum; voltage 1.5 V; CMOS integrated circuits; Impedance matching; Low power electronics; Noise; Noise measurement; Topology; Transistors; CG; CMOS; CS; Low Noise Amplifier (LNA); RF; Ultra-low power;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE

Conference_Location

Baltimore, MD

ISSN

1529-2517

Print_ISBN

978-1-4244-8293-1

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2011.5940634

Filename

5940634