• DocumentCode
    2017227
  • Title

    Channel Mobility of Gesi Quantum-Well P-Mosfet´s

  • Author

    Nayak, Dilip Kumar ; Woo, J.C.S. ; Park, Joon S. ; Wang, K.L.

  • Author_Institution
    Department of Electrical Engineering, University of California
  • fYear
    1991
  • fDate
    28-30 May 1991
  • Firstpage
    107
  • Lastpage
    108
  • Keywords
    Degradation; Germanium silicon alloys; Interface states; MOSFET circuits; Quantum wells; Rapid thermal annealing; Silicon germanium; Temperature; Threshold voltage; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
  • Conference_Location
    Oiso, Japan
  • Type

    conf

  • DOI
    10.1109/VLSIT.1991.706013
  • Filename
    706013
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2017227