Title :
Channel Mobility of Gesi Quantum-Well P-Mosfet´s
Author :
Nayak, Dilip Kumar ; Woo, J.C.S. ; Park, Joon S. ; Wang, K.L.
Author_Institution :
Department of Electrical Engineering, University of California
Keywords :
Degradation; Germanium silicon alloys; Interface states; MOSFET circuits; Quantum wells; Rapid thermal annealing; Silicon germanium; Temperature; Threshold voltage; Transconductance;
Conference_Titel :
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location :
Oiso, Japan
DOI :
10.1109/VLSIT.1991.706013
