DocumentCode
2017359
Title
Trends in memory technology - reliability perspectives, challenges and opportunities
Author
Mouli, C. ; Prall, Kirk ; Roberts, Clive
Author_Institution
Micron Technol. Inc, Boise
fYear
2007
fDate
11-13 July 2007
Abstract
As DRAM and NAND cells are rapidly scaled deep into the nanoscale regime, meeting design and reliability requirements require deeper understanding of single-cell characteristics. Some of the challenges are common between these technologies while some are unique. New materials and cell structures are being introduced to address some of these issues and provide further scaling opportunities.
Keywords
DRAM chips; NAND circuits; flash memories; integrated circuit reliability; DRAM; NAND cells; memory technology; reliability; Capacitance; Character generation; Costs; Electrons; Interference; Kirk field collapse effect; Nonvolatile memory; Paper technology; Random access memory; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007. 14th International Symposium on the
Conference_Location
Bangalore
Print_ISBN
978-1-4244-1014-9
Type
conf
DOI
10.1109/IPFA.2007.4378072
Filename
4378072
Link To Document