• DocumentCode
    2017359
  • Title

    Trends in memory technology - reliability perspectives, challenges and opportunities

  • Author

    Mouli, C. ; Prall, Kirk ; Roberts, Clive

  • Author_Institution
    Micron Technol. Inc, Boise
  • fYear
    2007
  • fDate
    11-13 July 2007
  • Abstract
    As DRAM and NAND cells are rapidly scaled deep into the nanoscale regime, meeting design and reliability requirements require deeper understanding of single-cell characteristics. Some of the challenges are common between these technologies while some are unique. New materials and cell structures are being introduced to address some of these issues and provide further scaling opportunities.
  • Keywords
    DRAM chips; NAND circuits; flash memories; integrated circuit reliability; DRAM; NAND cells; memory technology; reliability; Capacitance; Character generation; Costs; Electrons; Interference; Kirk field collapse effect; Nonvolatile memory; Paper technology; Random access memory; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007. 14th International Symposium on the
  • Conference_Location
    Bangalore
  • Print_ISBN
    978-1-4244-1014-9
  • Type

    conf

  • DOI
    10.1109/IPFA.2007.4378072
  • Filename
    4378072