DocumentCode
2017541
Title
Impact of Front End Processing on Gate Oxide Reliability
Author
Ahmed, Khandakar
Author_Institution
Inc., Sunnyvale
fYear
2007
fDate
11-13 July 2007
Abstract
In the past decade, SiON films with N content less than 15% at. have enabled scaling of CMOS devices down to 65nm node. The introduction of new materials (e.g. high-k, metal electrodes) and integration flows resulted in new device and circuit reliability issues. Innovation in process, integration and manufacturing equipment, in addition to acceleration of understanding of reliability physics for these new materials, are necessary in order to meet product reliability and performance specifications.
Keywords
CMOS integrated circuits; MOSFET; integrated circuit reliability; oxygen compounds; semiconductor device reliability; silicon compounds; CMOS devices; SiON; SiON - Interface; circuit reliability; front end processing; gate oxide reliability; integration equipment; manufacturing equipment; process innovation; product reliability; reliability physics; size 65 nm; Acceleration; Electrodes; High K dielectric materials; High-K gate dielectrics; Inorganic materials; Integrated circuit reliability; Manufacturing processes; Materials reliability; Physics; Technological innovation;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007. 14th International Symposium on the
Conference_Location
Bangalore
Print_ISBN
978-1-4244-1014-9
Type
conf
DOI
10.1109/IPFA.2007.4378078
Filename
4378078
Link To Document