Extensive Reliability Analysis of Tungsten Dot NC Devices Embedded in HfAlO High-k Dielectric under NAND (FN/FN) Operation

Author

Singh, Praveen Kumar ; Nainani, Aneesh

Author_Institution

IIT Bombay, Mumbai

fYear

2007

fDate

11-13 July 2007

Abstract

In this work we present an extensive reliability and performance evaluation of tungsten dot nanocrystal (NC) devices under NAND mode of operation. Improvement in performance and reliability was observed with scaling W and L. The use of better high-k processing is proposed to improve the reliability. We also propose a numerical simulation model for NC memory devices using transient capacitive charging model. The approach is very generic and computationally less extensive than the previous works.

Keywords

NAND circuits; circuit reliability; flash memories; hafnium compounds; high-k dielectric thin films; tungsten; HfAlO - Interface; HfAlO high-k dielectric; NAND (FN/FN) operation; NC memory devices; extensive reliability analysis; high-k processing; transient capacitive charging model; tungsten dot NC devices; tungsten dot nanocrystal devices; Dielectric devices; Dielectric materials; Fabrication; Flash memory; High K dielectric materials; High-K gate dielectrics; Nanocrystals; Nonvolatile memory; Performance analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007. 14th International Symposium on the

Conference_Location

Bangalore

Print_ISBN

978-1-4244-1014-9

Type

conf

DOI

10.1109/IPFA.2007.4378084

Filename

4378084