DocumentCode
2017762
Title
Novel Shallow Counter Doping Process and High Performance Buried Channel pMOSFET Using Boron Diffusion Through Oxide
Author
Toyoshima, Y. ; Eguchi, T. ; Hayashida, H. ; Hashimoto, K.
Author_Institution
Semiconductor Device Engineering Laboratory, Toshiba Corporation, Japan
fYear
1991
fDate
28-30 May 1991
Firstpage
111
Lastpage
112
Keywords
Annealing; Boron; CMOS technology; Counting circuits; Hydrogen; MOSFET circuits; Semiconductor device doping; Semiconductor devices; Threshold voltage; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location
Oiso, Japan
Type
conf
DOI
10.1109/VLSIT.1991.706015
Filename
706015
Link To Document