Title :
Reliability evaluation of 1.3 micron, oxide-apertured, InGaAsN VCSELs
Author :
Naone, R.L. ; Wasinger, N.M. ; Beltran, J.G. ; Chirovsky, L.M.F. ; Rossler, J.M. ; Adamcyk, M. ; Van Hove, J.M. ; Kisker, D.W.
Author_Institution :
Optical Commun. Products Inc., Broomfield, CO, USA
Abstract :
The paper describes the evaluation of devices using "locked-down" VCSEL fabrication process, which includes a more optimal growth condition for the InGaAsN-based active region. From preliminary reliability studies, product requirements, and device performance, designed stress conditions for all the reliability endurance tests are described.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser reliability; laser transitions; semiconductor device reliability; semiconductor lasers; surface emitting lasers; wide band gap semiconductors; 1.3 micron; InGaAsN; InGaAsN VCSEL; locked-down VCSEL fabrication; reliability; stress; Acceleration; Fabrication; Maximum likelihood estimation; Optical fiber communication; Semiconductor device modeling; Telecommunication standards; Temperature distribution; Testing; Thermal stresses; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363282
