Title :
A fully-integrated K-band CMOS power amplifier with Psat of 23.8 dBm and PAE of 25.1 %
Author :
Kawano, Yoichi ; Mineyama, Akiko ; Suzuki, Toshihide ; Sato, Masaru ; Hirose, Tatsuya ; Joshin, Kazukiyo
Author_Institution :
Fujitsu Ltd., Atsugi, Japan
Abstract :
A fully-integrated K-band differential power amplifier was designed in 65 nm CMOS. The power amplifier comprised of the 2-stage cascode configuration has the matching networks based on the transformer. To match the impedances, turn ratios of each transformer were designed to be 1:1 for the input stage, 2:1 for the inter stage, and 1:1.5 for the output stage, respectively. The saturation power of more than 20 dBm was obtained in the band between 16 GHz and 25 GHz. The peak value of the saturation power was 23.8 dBm, and the power added efficiency (PAE) was 25.1 % at 19 GHz. The chip occupied area including the DC and RF pads is 1.2 × 0.8 mm.
Keywords :
CMOS integrated circuits; field effect MIMIC; field effect MMIC; microwave power amplifiers; millimetre wave power amplifiers; DC pads; K-band CMOS power amplifier; RF pads; differential power amplifier; efficiency 25.1 percent; frequency 16 GHz to 25 GHz; matching networks; rwo-stage cascode configuration; size 65 nm; transformer design; CMOS integrated circuits; Frequency measurement; Gain; Impedance; K-band; Logic gates; Power amplifiers;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-8293-1
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2011.5940655
