DocumentCode
2017828
Title
1.55-μm bottom-emitting InAlGaAs VCSELs with Al2O3/a-Si thin-film pairs as a top mirror
Author
Song, Hyun-Woo ; Han, Won Seok ; Kim, Jong-Hee ; Kwon, O-Kyun ; Ju, Young-Gu ; Lee, Jong-Hyun ; Sang-Hee KoPark ; Kang, Seung-Goo
Author_Institution
Basic Res. Lab., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Volume
1
fYear
2004
fDate
7-11 Nov. 2004
Firstpage
410
Abstract
We demonstrate a 1.55-μm InAlGaAs/InP vertical-cavity surface-emitting laser grown by metal-organic chemical vapor deposition. AI2O3-Si thin-film pairs and InAlGaAs/InAlAs epitaxial layers are used as a top mirror and a bottom-side output coupler, respectively. Direct modulation characteristics through single mode fiber are reported in the speed of 2.5 Gbit/s.
Keywords
III-V semiconductors; MOCVD; alumina; aluminium; amorphous semiconductors; gallium arsenide; indium compounds; laser mirrors; laser transitions; optical communication equipment; optical couplers; optical modulation; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; silicon; surface emitting lasers; 1.55 mum; 2.5 Gbit/s; Al2O3-Si; Al2O3/a-Si thin-film pairs; InAlGaAs-InAlAs; InAlGaAs-InP; InAlGaAs/InAlAs epitaxial layers; bottom-emitting InAlGaAs VCSEL; bottom-side output coupler; direct modulation; metal-organic chemical vapor deposition; single mode fiber; top mirror; vertical-cavity surface-emitting laser; Artificial intelligence; Chemical lasers; Chemical vapor deposition; Fiber lasers; Indium compounds; Indium phosphide; Laser modes; Surface emitting lasers; Transistors; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN
0-7803-8557-8
Type
conf
DOI
10.1109/LEOS.2004.1363285
Filename
1363285
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