Title :
Degradation- and Failure Mode Analysis of III-V Nitride Devices
Author_Institution :
EMPA Swiss Federal Labs. for Mater. Testing & Res., Duebendorf
Abstract :
In this work, different failure modes and degradation mechanisms of AlInGaN LEDs were studied under different stress conditions. Another aim of this work was to develop a classification criteria of the LEDs based on initial RBL characteristics and enable the manufacturers ensure better reliability standards.
Keywords :
III-V semiconductors; aluminium compounds; failure analysis; gallium compounds; indium compounds; light emitting diodes; wide band gap semiconductors; AlInGaN; AlInGaN - Interface; III-V nitride devices; LED; RBL characteristics; degradation analysis; failure mode analysis; reliability standards; Degradation; Etching; Failure analysis; Frequency; Gallium nitride; III-V semiconductor materials; Light emitting diodes; Manufacturing industries; Quantum well devices; Testing;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007. 14th International Symposium on the
Conference_Location :
Bangalore
Print_ISBN :
978-1-4244-1014-9
DOI :
10.1109/IPFA.2007.4378102
