Threshold voltage extraction and its reliance on device parameters @ 16-nm process technology

Threshold voltage (V_TH) is a prime device parameter to model on-off transition characteristics for MOSFETs. Accurate V_TH of the device is evaluated by several estimation techniques reported in literature. However, these estimated values of V_TH differ from the exact values due to various short channel effects (SCEs) and non-idealities present in the devices. V_TH depends on various process parameters, device dimensions and also on the methodology used for extracting. With the technology scaling various effects come into picture while extracting V_TH. This paper presents a comparative study of various threshold estimation techniques @ 16-nm technology node. Further, dependence of V_TH on various design metrics and process parameter is also presented for different technology nodes. This work analyzes the effect of reduced process technology parameters on V_TH. Results are verified by extensive simulation on SPICE.