• DocumentCode
    2018249
  • Title

    Analytic model for the post-breakdown current in HfO2/TaN/TiN gate stacks

  • Author

    Miranda, E. ; Pey, K.L. ; Ranjan, Rajiv ; Tung, C.H.

  • fYear
    2007
  • fDate
    11-13 July 2007
  • Abstract
    We have examined the post-BD currents in high-k/metal gate MOSFETs with the Si substrate under depletion and accumulation conditions. The experimental results seem to point out that the electronic properties of the substrate region close to the entrance of the BD spot play a central role in the description of the phenomenon. We have also examined the behavior of the post-BD current in terms of the normalized differential conductance. An approximated analytic expression has been provided.
  • Keywords
    MOSFET; hafnium compounds; high-k dielectric thin films; semiconductor device breakdown; silicon; tantalum compounds; titanium compounds; HfO2-TaN-TiN; HfO2-TaN-TiN - Interface; HfO2/TaN/TiN gate stacks; Si; Si - Surface; electronic properties; high-k MOSFET; metal gate MOSFET; normalized differential conductance; post-BD currents; post-breakdown current; Dielectric breakdown; Dielectric substrates; Electrodes; Leakage current; MOSFETs; Microelectronics; Photonic band gap; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007. 14th International Symposium on the
  • Conference_Location
    Bangalore
  • Print_ISBN
    978-1-4244-1014-9
  • Type

    conf

  • DOI
    10.1109/IPFA.2007.4378104
  • Filename
    4378104
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2018249