Title :
Analytic model for the post-breakdown current in HfO2/TaN/TiN gate stacks
Author :
Miranda, E. ; Pey, K.L. ; Ranjan, Rajiv ; Tung, C.H.
Abstract :
We have examined the post-BD currents in high-k/metal gate MOSFETs with the Si substrate under depletion and accumulation conditions. The experimental results seem to point out that the electronic properties of the substrate region close to the entrance of the BD spot play a central role in the description of the phenomenon. We have also examined the behavior of the post-BD current in terms of the normalized differential conductance. An approximated analytic expression has been provided.
Keywords :
MOSFET; hafnium compounds; high-k dielectric thin films; semiconductor device breakdown; silicon; tantalum compounds; titanium compounds; HfO2-TaN-TiN; HfO2-TaN-TiN - Interface; HfO2/TaN/TiN gate stacks; Si; Si - Surface; electronic properties; high-k MOSFET; metal gate MOSFET; normalized differential conductance; post-BD currents; post-breakdown current; Dielectric breakdown; Dielectric substrates; Electrodes; Leakage current; MOSFETs; Microelectronics; Photonic band gap; Voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007. 14th International Symposium on the
Conference_Location :
Bangalore
Print_ISBN :
978-1-4244-1014-9
DOI :
10.1109/IPFA.2007.4378104
