DocumentCode
2018421
Title
Design of single thin film resistor network as 20dB attenuator for DC-20GHz application
Author
Zhong, Qi ; Liang, Xiaotong ; Liu, Zewen
Author_Institution
Institute of Microelectronics, Tsinghua University, Beijing 100084, China
fYear
2015
fDate
11-14 Aug. 2015
Firstpage
297
Lastpage
300
Abstract
In this paper a design methodology of a 20dB DC-20GHz attenuator based on single thin film resistor (STFR) on the high-resistivity silicon substrate is presented. The STFR could be equivalent to the π network via the conformal mapping and symmetry. The coplanar waveguide (CPW) is used as signal path for further connection with other devices such as the MEMS switches to make the attenuator reconfigurable. Tantalum nitride is used as the thin film material which could be prepared by a standard integral reactive sputtering process. The simulation results shows the attenuation of STFR attenuator is 20.00±0.03 dB in the DC to 20-GHz range with a return loss better than 27.5 dB.
Keywords
Attenuators; Switches; attenuator; single thin film resistor; ultra wideband;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology (ICEPT), 2015 16th International Conference on
Conference_Location
Changsha, China
Type
conf
DOI
10.1109/ICEPT.2015.7236596
Filename
7236596
Link To Document