• DocumentCode
    2018421
  • Title

    Design of single thin film resistor network as 20dB attenuator for DC-20GHz application

  • Author

    Zhong, Qi ; Liang, Xiaotong ; Liu, Zewen

  • Author_Institution
    Institute of Microelectronics, Tsinghua University, Beijing 100084, China
  • fYear
    2015
  • fDate
    11-14 Aug. 2015
  • Firstpage
    297
  • Lastpage
    300
  • Abstract
    In this paper a design methodology of a 20dB DC-20GHz attenuator based on single thin film resistor (STFR) on the high-resistivity silicon substrate is presented. The STFR could be equivalent to the π network via the conformal mapping and symmetry. The coplanar waveguide (CPW) is used as signal path for further connection with other devices such as the MEMS switches to make the attenuator reconfigurable. Tantalum nitride is used as the thin film material which could be prepared by a standard integral reactive sputtering process. The simulation results shows the attenuation of STFR attenuator is 20.00±0.03 dB in the DC to 20-GHz range with a return loss better than 27.5 dB.
  • Keywords
    Attenuators; Switches; attenuator; single thin film resistor; ultra wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology (ICEPT), 2015 16th International Conference on
  • Conference_Location
    Changsha, China
  • Type

    conf

  • DOI
    10.1109/ICEPT.2015.7236596
  • Filename
    7236596