DocumentCode
2018557
Title
Low-voltage surface-normal InGaAsP/InP modulator for optical interconnects
Author
Helman, Noah C. ; Roth, Jonathan E. ; Altug, Hatice ; Miller, David A B ; Bour, David P.
Author_Institution
Ginzton Lab., Stanford Univ., CA, USA
Volume
2
fYear
2004
fDate
7-11 Nov. 2004
Firstpage
461
Abstract
We present a quasi-waveguide angled facet electroabsorption modulator with a contrast ratio greater than 3 dB between 1496 nm and 1506 nm for 1 V drive as well as a misalignment tolerance of 30 μm.
Keywords
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; optical interconnections; 1 V; 1496 to 1506 nm; InGaAsP-InP; InGaAsP/InP modulator; angled facet modulator; electroabsorption modulator; low-voltage modulator; optical interconnects; quasiwaveguide modulator; surface-normal modulator; Etching; Indium phosphide; Laboratories; Low voltage; Mirrors; Optical interconnections; Optical modulation; Optical resonators; Optical surface waves; Optical transmitters;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN
0-7803-8557-8
Type
conf
DOI
10.1109/LEOS.2004.1363312
Filename
1363312
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