Title :
Low-voltage surface-normal InGaAsP/InP modulator for optical interconnects
Author :
Helman, Noah C. ; Roth, Jonathan E. ; Altug, Hatice ; Miller, David A B ; Bour, David P.
Author_Institution :
Ginzton Lab., Stanford Univ., CA, USA
Abstract :
We present a quasi-waveguide angled facet electroabsorption modulator with a contrast ratio greater than 3 dB between 1496 nm and 1506 nm for 1 V drive as well as a misalignment tolerance of 30 μm.
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; optical interconnections; 1 V; 1496 to 1506 nm; InGaAsP-InP; InGaAsP/InP modulator; angled facet modulator; electroabsorption modulator; low-voltage modulator; optical interconnects; quasiwaveguide modulator; surface-normal modulator; Etching; Indium phosphide; Laboratories; Low voltage; Mirrors; Optical interconnections; Optical modulation; Optical resonators; Optical surface waves; Optical transmitters;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363312
