94GHz power-combining power amplifier with +13dBm saturated output power in 65nm CMOS

Author

Sandström, Dan ; Martineau, Baudouin ; Varonen, Mikko ; Kärkkäinen, Mikko ; Cathelin, Andreia ; Halonen, Kari A I

Author_Institution

Dept. of Micro & Nanosci., Aalto Univ., Espoo, Finland

fYear

2011

fDate

5-7 June 2011

Firstpage

1

Lastpage

4

Abstract

A power combining power amplifier utilizing cascode topology and transformer-based matching elements is presented in this paper. The amplifier achieves +13 dBm saturated output power at 94 GHz with a standard 1.2 V supply and occupies an active area of only 0.069 mm². Amplifier is implemented in an industrial 65nm CMOS process taking into account reliability issues at high output power level. The amplifier is also ESD-protected at the input and at the output.

Keywords

CMOS integrated circuits; MIMIC; electrostatic discharge; impedance matching; integrated circuit reliability; millimetre wave power amplifiers; power combiners; CMOS process; ESD protected; cascode topology; frequency 94 GHz; power combining power amplifier; reliability issues; saturated output power; size 65 nm; transformer based matching element; voltage 1.2 V; CMOS integrated circuits; CMOS technology; Capacitors; Fingers; Power amplifiers; Power generation; Transmission line measurements; CMOS; ESD protection; millimeter-wave integrated circuits; power amplifiers; transformers;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE

Conference_Location

Baltimore, MD

ISSN

1529-2517

Print_ISBN

978-1-4244-8293-1

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2011.5940691

Filename

5940691