Title :
94GHz power-combining power amplifier with +13dBm saturated output power in 65nm CMOS
Author :
Sandström, Dan ; Martineau, Baudouin ; Varonen, Mikko ; Kärkkäinen, Mikko ; Cathelin, Andreia ; Halonen, Kari A I
Author_Institution :
Dept. of Micro & Nanosci., Aalto Univ., Espoo, Finland
Abstract :
A power combining power amplifier utilizing cascode topology and transformer-based matching elements is presented in this paper. The amplifier achieves +13 dBm saturated output power at 94 GHz with a standard 1.2 V supply and occupies an active area of only 0.069 mm2. Amplifier is implemented in an industrial 65nm CMOS process taking into account reliability issues at high output power level. The amplifier is also ESD-protected at the input and at the output.
Keywords :
CMOS integrated circuits; MIMIC; electrostatic discharge; impedance matching; integrated circuit reliability; millimetre wave power amplifiers; power combiners; CMOS process; ESD protected; cascode topology; frequency 94 GHz; power combining power amplifier; reliability issues; saturated output power; size 65 nm; transformer based matching element; voltage 1.2 V; CMOS integrated circuits; CMOS technology; Capacitors; Fingers; Power amplifiers; Power generation; Transmission line measurements; CMOS; ESD protection; millimeter-wave integrated circuits; power amplifiers; transformers;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-8293-1
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2011.5940691
