DocumentCode
2018967
Title
Power limiter/low-noise amplifier of C-band
Author
Platonov, Sergey V. ; Osipov, Andrey M. ; Kozlovsky, Eduard Y.
Author_Institution
Yaroslav-the-Wise Novgorod State Univ., Veliky Novgorod, Russia
fYear
2010
fDate
June 30 2010-July 4 2010
Firstpage
193
Lastpage
196
Abstract
The article describes designing of a low-noise amplifier with protection of input stages against influence input CW power to 2 W working in a range of frequencies 3...8 GHz with gain not less than 32 dB. The amplifier is made of the quasi-monolithic circuit. The basic stages of design, modeling of amplifier operation and its implementation are described. Comparative results of simulated and measured values of the developed amplifier are presented.
Keywords
low noise amplifiers; microwave amplifiers; microwave limiters; amplifier design; amplifier implementation; amplifier operation modeling; frequency 3 GHz to 8 GHz; input stage protection; low-noise amplifier; power 2 W; power limiter; quasimonolithic circuit; Buffer layers; Extraterrestrial measurements; Logic gates; Radio frequency; Transistors; Low-noise amplifier; power limiter; transistor;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro/Nanotechnologies and Electron Devices (EDM), 2010 International Conference and Seminar on
Conference_Location
Novosibirsk
Print_ISBN
978-1-4244-6626-9
Type
conf
DOI
10.1109/EDM.2010.5568829
Filename
5568829
Link To Document