DocumentCode
2019242
Title
A 19 dBm 0.13µm CMOS parallel class-E switching PA with minimal efficiency degradation under 6 dB back-off
Author
Singhal, Nitesh ; Nidhi, Nitin ; Ghosh, Abhishek ; Pamarti, Sudhkar
Author_Institution
Henry Samueli Sch. of Eng., Univ. of California Los Angeles, Los Angeles, CA, USA
fYear
2011
fDate
5-7 June 2011
Firstpage
1
Lastpage
4
Abstract
This paper implements a digital Zero Voltage Switching (ZVS) Contour based power amplifier previously proposed by the authors in [1]. The proposed PA implemented in 0.13μm digital CMOS technology, achieves a peak power of 19dBm at a peak drain efficiency of 23% and peak power added efficiency (PAE) of 18% at a center frequency of 800MHz from a 1.2V supply. The PA can maintain its peak efficiency over a 6dB dynamic range of output power by a simultaneous load and duty cycle modulation of a parallel class E PA. The PA achieves an average drain efficiency of 20% and an average PAE of 15% while generating 6dB peak to minimum ratio (PMR) OQPSK signal with bandwidths up to 20Mbps.
Keywords
CMOS integrated circuits; power amplifiers; quadrature phase shift keying; zero voltage switching; CMOS parallel class-E switching power amplifier; OQPSK signal; average drain efficiency; contour based power amplifier; digital CMOS technology; digital zero voltage switching; duty cycle modulation; frequency 800 MHz; minimal efficiency degradation; peak drain efficiency; peak power added efficiency; peak to minimum ratio; size 0.13 mum; voltage 1.2 V; CMOS integrated circuits; Capacitance; Capacitors; Power amplifiers; Power generation; Switches; Zero voltage switching; PA; PAE; PAR; PMR;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits Symposium (RFIC), 2011 IEEE
Conference_Location
Baltimore, MD
ISSN
1529-2517
Print_ISBN
978-1-4244-8293-1
Electronic_ISBN
1529-2517
Type
conf
DOI
10.1109/RFIC.2011.5940714
Filename
5940714
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