3D multiphysics modelling of high voltage IGBT module packaging

140mm×190mm×38mm dimension single-switch high voltage insulated-gate bipolar transistor (IGBT) modules have been widely used in traction, high voltage converters as a standard package. The internal structural design and assembly processes have always been optimized to achieve lower parasitic inductance of the internal busbars, better thermal/mechanical characteristics of substrate and whole module. In this paper, 3D modelling technologies have been utilised for the electrical, electromagnetic, thermal, mechanical (multiphysics) aspects to speed up the design cycle and reduce the expensive research and development costs. By applying 3D modelling and simulation techniques, a 30% parasitic inductance reduction has been achieved.