Design of 920 MHz, 0.8 μm CMOS Low Noise Amplifier for UHF RFID Reader

Author

Marzuki, A. ; David, Stephanie

Author_Institution

Technol. Sdn Bhd, IT Centre KHTP, Kedah

fYear

2006

fDate

12-14 Sept. 2006

Firstpage

149

Lastpage

151

Abstract

A 920 MHz low noise amplifier (LNA) design for UHF RFID reader application, requiring one external inductor and matched to 50 Ω at the output, has been implemented in a standard analog 0.8-μm CMOS technology. Cascode topology is used in the design provide good gain and moderate noise figure. High frequency inductor model is also presented. Simulated noise figures for the LNA are 2.02 dB at 197 mW, and 2.81 dB at 28.2 mW. The LNA has a power gain of 15.7 dB, and an IIP3 of 3 dBm at 197 mW. The LNA has a power gain of 12.46 dB, and an IIP3 of 2.61 dBm at 28.2 mW.

Keywords

CMOS analogue integrated circuits; UHF amplifiers; inductors; low noise amplifiers; radiofrequency identification; 0.8 micron; 12.46 dB; 15.7 dB; 197 mW; 2.02 dB; 2.81 dB; 28.2 mW; 920 MHz; CMOS low noise amplifier; UHF RFID reader; cascode topology; high frequency inductor model; standard analog CMOS technology; Application specific integrated circuits; CMOS technology; Costs; Impedance; Inductors; Low-noise amplifiers; Radiofrequency identification; Supply chain management; Topology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

RF and Microwave Conference, 2006. RFM 2006. International

Conference_Location

Putra Jaya

Print_ISBN

0-7803-9744-4

Electronic_ISBN

0-7803-9745-2

Type

conf

DOI

10.1109/RFM.2006.331057

Filename

4133572