DocumentCode
2020484
Title
Packaging and Feedthrough Modes of Wafer Level for RF MEMS Switches
Author
Wu, Qun ; He, Xun-jun ; Jin, Bo-shi ; Song, Ming-Xin ; Yin, Jing-Hua
Author_Institution
Sch. of Electron. & Inf. Technol., Harbin Inst. of Technol.
fYear
2006
fDate
12-14 Sept. 2006
Firstpage
165
Lastpage
168
Abstract
This paper reports on the methods, feedthrough modes and RF performance of wafer level packaging for RF MEMS switches. By analyzing the effects of packaging methods and feedthrough modes on the cost, weight, size, loss, RF performance and function of switches, a novel wafer level packaging structure which is performed using the wafer-level microencapsulation on the thin silicon substrate as the RF MEMS switches wafer with the vertical feedthroughs is presented. This structure has some advantages, such as low thickness, low parasitic capacity, short electric path, lightweight, no real ring and compatibility with the devices fabrication processes. Therefore, for RF applications, the packaging structure obviously reduces electric path loss and fabrication cost, and provides better RF performance of RF MEMS switches
Keywords
encapsulation; microswitches; silicon; wafer level packaging; RF MEMS switches; electric path loss; feedthrough modes; vertical feedthroughs; wafer level packaging method; wafer-level microencapsulation; Cost function; Fabrication; Packaging; Performance analysis; Performance loss; Radio frequency; Radiofrequency microelectromechanical systems; Silicon; Switches; Wafer scale integration; Packaging; RF MEMS; Switches; Wafer Level;
fLanguage
English
Publisher
ieee
Conference_Titel
RF and Microwave Conference, 2006. RFM 2006. International
Conference_Location
Putra Jaya
Print_ISBN
0-7803-9744-4
Electronic_ISBN
0-7803-9745-2
Type
conf
DOI
10.1109/RFM.2006.331061
Filename
4133576
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