Title :
35 GHz pure passively mode locked quantum dot lasers operating close to 1.3 μm
Author :
Tan, W.K. ; Bryce, A.C. ; Marsh, J.H. ; Maximov, M.V. ; Ustinov, V.M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Glasgow Univ., UK
Abstract :
35 GHz passive mode locking operation of InAs/GaAs/AlGaAs quantum dot (QD) lasers emitting close to 1.3 μm is reported for the first time. Pure passive mode locking without any trace of self-pulsation is achieved.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser mode locking; quantum dot lasers; 1.3 mum; 35 GHz; InAs-GaAs-AlGaAs; InAs/GaAs/AlGaAs lasers; mode locked lasers; passive mode locking; quantum dot lasers; Bandwidth; Diode lasers; Dry etching; Frequency estimation; Gallium arsenide; Laser mode locking; Quantum dot lasers; Quantum well lasers; Radio frequency; US Department of Transportation;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363390
