Wide band high linearity and high isolation mixer MMIC developed on GaAs 0.25μm power pHEMT technology

Author

Dinari, M. ; Serru, V. ; Camiade, M. ; Teyssandier, C. ; Baglieri, D. ; Durand, E. ; Mallet-Guy, B. ; Plaze, J.P.

Author_Institution

United Monolithic Semicond. SAS, Orsay, France

fYear

2009

fDate

Sept. 29 2009-Oct. 1 2009

Firstpage

1661

Lastpage

1664

Abstract

In the frame of radar and warfare applications, a monolithic microwave integrated circuit (MMIC) mixer has been developed using a UMS GaAs 0.25 μm power pHEMT technology. The mixer presented in this document exhibits at the same time wide frequency band, high isolation and high linearity. In the 6-18 GHz frequency band, the mixer demonstrates 25 dB for the isolations, an input RF compression point higher than 16 dBm and an input IP3 of 25 dBm. To our knowledge these performances are among the highest reported on a fully integrated GaAs MMIC.

Keywords

III-V semiconductors; MMIC mixers; gallium arsenide; power HEMT; power integrated circuits; GaAs; UMS GaAs; frequency 6 GHz to 18 GHz; fully integrated broadband mixer; high isolation mixer MMIC; input IP3; input RF compression point; monolithic microwave integrated circuit mixer; power pHEMT technology; wide frequency band high linearity; Application specific integrated circuits; Frequency; Gallium arsenide; Integrated circuit technology; Isolation technology; Linearity; MMICs; PHEMTs; Radar applications; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2009. EuMC 2009. European

Conference_Location

Rome

Print_ISBN

978-1-4244-4748-0

Type

conf

Filename

5296270