DocumentCode
2021133
Title
Femtosecond carrier dynamics in InGaN multiple-quantum-well laser diodes under high injection levels
Author
Gan, Kian-Giap ; Bowers, John E. ; Sun, Chi-Kuang
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Volume
2
fYear
2004
fDate
7-11 Nov. 2004
Firstpage
669
Abstract
The carrier dynamics of an InGaN multiple-quantum-well (MQW) laser diode under the high current injection level is examined using time-resolved pump-probe measurements. Subpicosecond intersubband hole relaxation and hole heating processes are found to dominate carrier dynamics responses, different from GaAs and InP based laser diodes.
Keywords
III-V semiconductors; gallium compounds; high-speed optical techniques; indium compounds; optical pumping; quantum well lasers; time resolved spectra; InGaN; current injection level; femtosecond carrier dynamics; hole heating processes; multiple-quantum-well laser diodes; subpicosecond intersubband hole relaxation; time-resolved pump-probe measurements; Delay; Diode lasers; Laser beams; Laser excitation; Optical reflection; Probes; Quantum well devices; RNA; Tellurium; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN
0-7803-8557-8
Type
conf
DOI
10.1109/LEOS.2004.1363416
Filename
1363416
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