Title :
Passively mode-locked monolithic semiconductor diode lasers incorporating dispersion compensation
Author :
Flynn, Michael B. ; O´Faolain, Liam ; Krauss, Thomas F.
Author_Institution :
Sch. of Phys. & Astron., Saint Andrews Univ., UK
Abstract :
The effect of integrating a chirped mirror at one end of the monolithic semiconductor lasers to act as a group delay mirror was considered. A multi-layered mirror can be fabricated by etching air slots into the waveguide structure. The system is examined numerically using a time domain travelling wave method. The multi-layer mirror is modelled using a transfer matrix method. The parameters chosen correspond to a GaAs-InGaAsP-InP multiple quantum well laser operating at a wavelength 1.55 μm. The effect of dispersion compensation on the pulse duration and on the time band-width product of the pulses. Suitable multi-layer mirror elements are suggested, taking fabrication tolerances into account.
Keywords :
III-V semiconductors; arsenic compounds; compensation; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; integrated optics; laser mirrors; laser mode locking; monolithic integrated circuits; optical dispersion; optical fabrication; optical multilayers; optical waveguides; quantum well lasers; 1.55 mum; GaAs-InGaAsP-InP; chirped mirror; dispersion compensation; group delay mirror; multilayered mirror; multiple quantum well laser; passively mode-locked monolithic semiconductor diode lasers; pulse duration; time domain travelling wave method; transfer matrix method; waveguide structure; Chirp; Delay effects; Etching; Laser mode locking; Mirrors; Semiconductor diodes; Semiconductor lasers; Semiconductor waveguides; Transmission line matrix methods; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363421
