DocumentCode
2021408
Title
Low-divergence large-optical-cavity InGaAs quantum-dot laser with distributed active layers
Author
Kim, S. ; Bryce, A.C. ; Yanson, D.A. ; Marsh, J.H.
Author_Institution
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Volume
2
fYear
2004
fDate
7-11 Nov. 2004
Firstpage
691
Abstract
A large optical cavity, quantum-dot ridge waveguide laser with distributed active layers has been fabricated and characterized. Lasing in a single spatial mode has been achieved with narrow far-field angles (12°×23°) and a low threshold current.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser modes; optical fabrication; quantum dot lasers; waveguide lasers; GaAs-InGaAs; distributed active layers; large-optical-cavity InGaAs quantum-dot laser; quantum-dot ridge waveguide laser; spatial mode; Gallium arsenide; Indium gallium arsenide; Laser modes; Optical refraction; Optical sensors; Optical variables control; Optical waveguides; Quantum dot lasers; Threshold current; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN
0-7803-8557-8
Type
conf
DOI
10.1109/LEOS.2004.1363427
Filename
1363427
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