Title :
Carrier transport and injection efficiency of InGaAsN quantum-well lasers
Author :
Yeh, Jeng-Ya ; Mawst, Luke J. ; Tansu, Nelson
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
Abstract :
InGaAsN lasers with asymmetrically placed active region were fabricated and characterized. By moving the QW closer to p-cladding layer, reduced hole transport time in separate confinement heterostructure (SCH) results in lower threshold current, higher injection efficiency and its characteristic temperature. The experimental results agrees well with calculation.
Keywords :
III-V semiconductors; claddings; gallium arsenide; gallium compounds; indium compounds; optical fabrication; quantum well lasers; InGaAsN; carrier transport; hole transport time; injection efficiency; p-cladding layer; quantum-well lasers; separate confinement heterostructure; threshold current; Carrier confinement; Equations; Laser modes; Optical design; Optical losses; Photonics; Quantum well lasers; Radiative recombination; Temperature measurement; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
DOI :
10.1109/LEOS.2004.1363428
