DocumentCode
2021429
Title
Carrier transport and injection efficiency of InGaAsN quantum-well lasers
Author
Yeh, Jeng-Ya ; Mawst, Luke J. ; Tansu, Nelson
Author_Institution
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
Volume
2
fYear
2004
fDate
7-11 Nov. 2004
Firstpage
693
Abstract
InGaAsN lasers with asymmetrically placed active region were fabricated and characterized. By moving the QW closer to p-cladding layer, reduced hole transport time in separate confinement heterostructure (SCH) results in lower threshold current, higher injection efficiency and its characteristic temperature. The experimental results agrees well with calculation.
Keywords
III-V semiconductors; claddings; gallium arsenide; gallium compounds; indium compounds; optical fabrication; quantum well lasers; InGaAsN; carrier transport; hole transport time; injection efficiency; p-cladding layer; quantum-well lasers; separate confinement heterostructure; threshold current; Carrier confinement; Equations; Laser modes; Optical design; Optical losses; Photonics; Quantum well lasers; Radiative recombination; Temperature measurement; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN
0-7803-8557-8
Type
conf
DOI
10.1109/LEOS.2004.1363428
Filename
1363428
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