Concurrent dual band 2.4/3.5GHz fully integrated power amplifier in 0.13µm CMOS technology

Author

Ghajar, Mohammad Reza ; Boumaiza, Slim

Author_Institution

Emerging Radio Syst. Group, Univ. of Waterloo, Waterloo, ON, Canada

fYear

2009

fDate

Sept. 29 2009-Oct. 1 2009

Firstpage

1728

Lastpage

1731

Abstract

This paper proposes novel dual-band matching network, suitable for the design of integrated concurrent dual band power amplifier in a multi-standard radiofrequency front-end. The effectiveness of the proposed dual band matching network was demonstrated through the implementation of a power amplifier operating at 2.4 GHz and 3.5 GHz in IBM 0.13 μm CMOS technology. The designed 1.25 mm × 1.25 mm dual band PA allowed for power added efficiency (PAE) and output power of about 42% and more than 18 dbm, respectively, at both frequencies.

Keywords

CMOS integrated circuits; UHF power amplifiers; microwave power amplifiers; CMOS technology; concurrent dual band fully integrated power amplifier; dual-band matching network; frequency 2.4 GHz to 3.5 GHz; multistandard radiofrequency front-end; power added efficiency; size 0.13 mum; Bandwidth; CMOS technology; Circuits; Dual band; Microwave amplifiers; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Signal processing; Switches; Dual band front ends; Integrated; Power Amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2009. EuMC 2009. European

Conference_Location

Rome

Print_ISBN

978-1-4244-4748-0

Type

conf

Filename

5296307