A 7 GHz FBAR overtone-based oscillator

Author

ElBarkouky, Mohamed ; Vandersteen, Gerd ; Wambacq, Piet ; Rolain, Yves

Author_Institution

ELEC Dept., Vrije Univ. Brussel, Brussels, Belgium

fYear

2009

fDate

Sept. 29 2009-Oct. 1 2009

Firstpage

318

Lastpage

321

Abstract

Film bulk acoustic wave resonators (FBARs) prove to be good candidates for designing low-power oscillators in the low-GHz frequency region. To boost the use of FBAR resonators to higher frequencies, we demonstrate an oscillator that uses an overtone frequency of the FBAR. A 7 GHz oscillator is built on a PCB using a commercial pHEMT transistor as an active element and surface mounted passive components. The FBAR is wire bonded to the PCB. The measured phase noise of -110 dBc/Hz at 1MHz offset. To the author´s knowledge this circuit is the first realized FBAR overtone-based oscillator on PCB.

Keywords

HEMT circuits; acoustic resonators; bulk acoustic wave devices; lead bonding; low-power electronics; microwave oscillators; phase noise; surface mount technology; thin film devices; FBAR overtone-based oscillator; PCB; active element; film bulk acoustic wave resonators; frequency 7 GHz; low-power oscillator design; pHEMT transistor; surface mounted passive components; wire bonding; Acoustic waves; Bonding; Film bulk acoustic resonators; Noise measurement; Oscillators; PHEMTs; Phase measurement; Phase noise; Resonant frequency; Wire; Colpitts oscillator; FBAR resonators; PCB oscillators; low phase noise; overtone frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2009. EuMC 2009. European

Conference_Location

Rome

Print_ISBN

978-1-4244-4748-0

Type

conf

Filename

5296327