DocumentCode
2022294
Title
Parasitic parameter extraction and modeling of via of high speed differential pair
Author
He, Huimin ; Wu, Peng ; Liu, Fengman ; Xue, Haiyun ; Li, Baoxia ; Shangguan, Dongkai
Author_Institution
Microsystem Packaging Research Center, Institute of Microelectronics of Chinese Academy of Sciences, No. 3, BeiTuCheng, West Road, Beijing, China, 100029
fYear
2015
fDate
11-14 Aug. 2015
Firstpage
955
Lastpage
959
Abstract
Since high speed digital signal interconnection usually consists of differential transmission lines and pairs of via, signals passing through pairs of via need carefully handling for via can be either capacitive or inductive. The modeling of high speed via is critical to match the impedance of a pair of via and differential transmission line. Parasitic parameters of a pair of via such as capacitances and inductances can be extracted by Q3d, a high performance EM parameter extraction software. Several variables are analyzed: the diameter of via, pad, anti-pad, space between the pair of via and position of ground via around the differential signal via. From the simulation results, parasitic parameters have a significant change with these variables changed. At the same time, TDR (Time domain reflection) and S parameter are also simulated by HFSS to verify the parasitic parameter´s effects. Parameter extraction and modeling with a pair of via is a helpful way for via optimization, which is commonly used in high speed digital signal interconnection, high frequency transceiver and many application areas.
Keywords
Capacitance; Electronics packaging; Impedance; Inductance; Insertion loss; Integrated circuit modeling; Optimization; Parameter extraction; digital signal interconnection; impedance discontinuities; modeling; signal integrity;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology (ICEPT), 2015 16th International Conference on
Conference_Location
Changsha, China
Type
conf
DOI
10.1109/ICEPT.2015.7236737
Filename
7236737
Link To Document