Title :
S-band radar LDMOS transistors
Author :
Theeuwen, S.J.C.H. ; Mollee, H.
Author_Institution :
NXP Semicond., Nijmegen, Netherlands
Abstract :
LDMOS transistors have become the device choice for microwave applications. An overview is given of the LDMOS technology improvements at 3.6 GHz over the last decade, and RF performance of LDMOS microwave products for S-band radar is presented.
Keywords :
MOSFET; microwave field effect transistors; radar equipment; RF performance; S-band radar LDMOS transistors; frequency 3.6 GHz; microwave applications; Radar; MOSFET power amplifiers; Microwave amplifiers; Semiconductor device fabrication;
Conference_Titel :
Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4749-7
