Title :
Are we there yet? - a metamorphic HEMT and HBT perspective
Author :
Ng, Geok Ing ; Radhakrishnan, K. ; Wang, Hong
Author_Institution :
MMIC Design Centre, Nanyang Technol. Univ., Singapore
Abstract :
Metamorphic epitaxy technique offers the possibility of combining the advantages of low-cost and manufacturability of GaAs substrates and the high performance of InP-based devices. This paper presents the recent development of metamorphic HEMTs and HBTs and discusses their readiness for commercialization.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; GaAs; HBT perspective; InP; metamorphic HEMT; metamorphic epitaxy technique; Costs; Design engineering; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; Performance gain; Substrates; Voltage; mHEMTs;
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7
