DocumentCode
2022566
Title
A 3.2 W coplanar single-device X-band amplifier with GaAs HBT
Author
Lenk, F. ; Klockenhoff, H. ; Kurpas, P. ; Maabdorf, Andre ; Würfl, H.J. ; Heinrich, W.
Author_Institution
Ferdinand-Braun-Institut, Berlin, Germany
fYear
2005
fDate
3-4 Oct. 2005
Firstpage
49
Lastpage
52
Abstract
High-power GaInP/GaAs HBTs with high breakdown voltage for X-band applications are presented. To demonstrate the capabilities of these devices, a simple monolithic amplifier is realized. For a single 12-finger device with 2/spl times/70 /spl mu/m/sup 2/ emitter finger size, an output power of 3.2 W at 9 GHz with 47% PAE is achieved.
Keywords
III-V semiconductors; MMIC power amplifiers; bipolar MMIC; electric breakdown; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; 12-finger device; 3.2 W; 9 GHz; GaInP-GaAs; HBT; breakdown voltage; coplanar single-device X-band amplifier; monolithic amplifier; Frequency; Gallium arsenide; Gallium nitride; HEMTs; Heterojunction bipolar transistors; High power amplifiers; MMICs; MODFETs; Power amplifiers; Power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location
Paris
Print_ISBN
88-902012-0-7
Type
conf
Filename
1637147
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