Title :
A 17 to 26 GHz micromixer in SiGe BiCMOS technology
Author :
Bao, Mingquan ; Li, Yinggang
Author_Institution :
Ericsson Res., Ericsson AB, Molndal, Sweden
Abstract :
We report, for the first time, our experimental results of a high frequency micromixer operating from 17 to 26 GHz in SiGe technology. Good linearity performance is achieved: typically 0 dBm input-referred P/sub -1dB/ and 8 dBm IIP3. The conversion gain and double side band noise figure at 23 GHz RF input is -3.6 dB and 18.2 dB, respectively. The local oscillator power required for proper operation is below 0 dBm and the DC power consumption is 86 mW for a 3.3 V supply. For purpose of comparison, a Gilbert mixer is also implanted on the same wafer. The experimental results are compared for the two active mixers.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC mixers; semiconductor materials; -3.6 dB; 17 to 26 GHz; 18.2 dB; 3.3 V; 86 mW; BiCMOS technology; Gilbert mixer; SiGe; local oscillator; micromixer; BiCMOS integrated circuits; Energy consumption; Germanium silicon alloys; Inductors; Linearity; Microwave technology; Mixers; Noise figure; Radio frequency; Silicon germanium;
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7
