• DocumentCode
    2022840
  • Title

    High frequency low noise potentialities of down to 65 nm technology nodes MOSFETs

  • Author

    Dambrine, G. ; Gloria, D. ; Scheer, P. ; Raynaud, C. ; Danneville, F. ; Lepilliet, S. ; Siligaris, A. ; Pailloncy, G. ; Martineau, B. ; Bouhana, E. ; Valentin, R.

  • Author_Institution
    DHS, IEMN-CNRS, Villeneuve d´´Ascq, France
  • fYear
    2005
  • fDate
    3-4 Oct. 2005
  • Firstpage
    97
  • Lastpage
    100
  • Abstract
    65 nm n-MOSFETs show state-of-the-art cut-off frequency with ft = 210 GHz and microwave low noise and high gain properties (NFmin = 0.8 dB and Gass = 17.3 dB at 12 GHz). As compared with the previous nodes, the high frequency properties of these MOSFETs continue to be in agreement with the downscaling trends.
  • Keywords
    MOSFET; microwave field effect transistors; 0.8 dB; 12 GHz; 17.3 dB; 210 GHz; MOSFET; high gain properties; microwave low noise; state-of-the-art cut-off frequency; CMOS technology; Calibration; Cutoff frequency; MOSFET circuits; Microelectronics; Microwave technology; Millimeter wave technology; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
  • Conference_Location
    Paris
  • Print_ISBN
    88-902012-0-7
  • Type

    conf

  • Filename
    1637159
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2022840