Bright ultrafast EUV sources for time-resolved absorption measurements

Author

Nakano, Hidetoshi ; Oguri, Katsuya ; Nishikawa, Tadashi

Author_Institution

NTT Basic Res. Labs., Kanagawa, Japan

Volume

2

fYear

2004

fDate

7-11 Nov. 2004

Firstpage

817

Abstract

A cross-correlation method for measuring the EUV pulse duration using an optical-field induced ionization process in a noble gas is performed. The duration of the 51st harmonic at 15.56 nm was measured. Time-resolved EUV absorption measurements near the L_II,III absorption edge (∼ 100 eV) of optically excited silicon is also performed using broadband picosecond EUV pulses emitted from femtosecond laser-produced plasma. A rapid change in the near-edge absorption of silicon is observed.

Keywords

elemental semiconductors; optical correlation; optical harmonic generation; optical materials; optical pulse generation; photoionisation; plasma production by laser; silicon; time resolved spectra; ultraviolet sources; ultraviolet spectra; 15.56 nm; L_II,III absorption edge; Si; femtosecond laser-produced plasma; noble gas; optical-field induced ionization process; optically excited silicon; time-resolved absorption measurements; ultrafast EUV sources; Absorption; Ionization; Optical pulses; Performance evaluation; Plasma measurements; Pulse measurements; Silicon; Stimulated emission; Ultrafast optics; Ultraviolet sources;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE

Print_ISBN

0-7803-8557-8

Type

conf

DOI

10.1109/LEOS.2004.1363491

Filename

1363491