CMOS devices and circuits for microwave and millimetre wave applications

Author

Ferndahl, M. ; Motlagh, B.M. ; Masud, A. ; Angelov, I. ; Vickes, H.-O. ; Zirath, H.

Author_Institution

Dept. of Microtechnology & Nanoscience, Chalmers Univ. of Technol., Goteborg, Sweden

fYear

2005

fDate

3-4 Oct. 2005

Firstpage

105

Lastpage

108

Abstract

We present several building blocks for RF front ends at micro and mm-wave frequencies using 90 nm CMOS. The designs are 20 GHz single- and 40 GHz double stage amplifiers with 5.6 and 7.3 dB gain respectively, a 20 GHz resistive mixer with CL - 7.9 dB and IIP3 - 17.5 dBm plus frequency doublers to 40 and 60 GHz with CL = 15.8 and 15.3 dB respectively. All circuits have been designed using distributed elements. Both using a 5 metal layer BEOL process and a 3 metal layer BEOL with post processing.

Keywords

CMOS integrated circuits; frequency multipliers; microwave amplifiers; microwave integrated circuits; millimetre wave amplifiers; millimetre wave integrated circuits; millimetre wave mixers; 20 GHz; 40 GHz; 5.6 dB; 60 GHz; 7.3 dB; CMOS circuits; CMOS devices; RF front ends; double stage amplifiers; frequency doublers; microwave applications; millimetre wave applications; resistive mixer; single-stage amplifiers; CMOS process; CMOS technology; Capacitance; Microwave circuits; Microwave devices; Microwave technology; Millimeter wave technology; Radio frequency; Radiofrequency amplifiers; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European

Conference_Location

Paris

Print_ISBN

88-902012-0-7

Type

conf

Filename

1637161