DocumentCode
2022913
Title
Nano-mechanical properties of Sn micro-bumps
Author
Man, He ; Shijie, Chen ; Weisheng, Xia ; Bo, Wang
Author_Institution
School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, China
fYear
2015
fDate
11-14 Aug. 2015
Firstpage
1054
Lastpage
1057
Abstract
As ITRS predicted, the diameter of the through silicon via (TSV) would reduce to 1.6 µm by 2015, and the size of TSV interconnection will fall to the range of 10 µm or less, and thus micro-bumps will contain only a few crystal with such a dimension. Because Sn has relatively the high creep resistant and moderate melting point, it is appropriated to be applied in TSV interconnection. This paper investigates the Nano-mechanical properties of Sn micro-bumps containing a single grain. Nano-mechanical test indicates that Sn micro-bumps with the diameter of 40 µm have anisotropic elastic modulus. The surface of Sn micro-bumps with the diameter of 40 µm is without strain-hardening, and the strain hardening index of its section is 0.1701. The decrease of strain hardening index shows that a-axis shear resistance of Sn micro-bumps is far less than that of the c-axis.
Keywords
Force; Indexes; Resistance; Silicon; Tin; Nanoindentation; Sn micro-bumps; elastic modulus; shear resistance; strain hardening index;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology (ICEPT), 2015 16th International Conference on
Conference_Location
Changsha, China
Type
conf
DOI
10.1109/ICEPT.2015.7236761
Filename
7236761
Link To Document