• DocumentCode
    2022913
  • Title

    Nano-mechanical properties of Sn micro-bumps

  • Author

    Man, He ; Shijie, Chen ; Weisheng, Xia ; Bo, Wang

  • Author_Institution
    School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, China
  • fYear
    2015
  • fDate
    11-14 Aug. 2015
  • Firstpage
    1054
  • Lastpage
    1057
  • Abstract
    As ITRS predicted, the diameter of the through silicon via (TSV) would reduce to 1.6 µm by 2015, and the size of TSV interconnection will fall to the range of 10 µm or less, and thus micro-bumps will contain only a few crystal with such a dimension. Because Sn has relatively the high creep resistant and moderate melting point, it is appropriated to be applied in TSV interconnection. This paper investigates the Nano-mechanical properties of Sn micro-bumps containing a single grain. Nano-mechanical test indicates that Sn micro-bumps with the diameter of 40 µm have anisotropic elastic modulus. The surface of Sn micro-bumps with the diameter of 40 µm is without strain-hardening, and the strain hardening index of its section is 0.1701. The decrease of strain hardening index shows that a-axis shear resistance of Sn micro-bumps is far less than that of the c-axis.
  • Keywords
    Force; Indexes; Resistance; Silicon; Tin; Nanoindentation; Sn micro-bumps; elastic modulus; shear resistance; strain hardening index;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology (ICEPT), 2015 16th International Conference on
  • Conference_Location
    Changsha, China
  • Type

    conf

  • DOI
    10.1109/ICEPT.2015.7236761
  • Filename
    7236761