Broadband AlGaN/GaN high power amplifiers, robust LNAs, and power switches in L-Band

Author

Piotrowicz, S. ; Mallet-Guy, B. ; Chartier, E. ; Jacquet, J.C. ; Jardel, O. ; Lancereau, D. ; Le Coustre, G. ; Morvan, E. ; Aubry, R. ; Dua, C. ; Oualli, M. ; Richard, M. ; Sarazin, N. ; diForte-Poisson, M.A. ; Delaire, J. ; Mancuso, Y. ; Delage, S.L.

Author_Institution

3-5 Lab., Alcatel-Thales, Marcoussis, France

fYear

2009

fDate

28-29 Sept. 2009

Firstpage

431

Lastpage

434

Abstract

GaN-based HEMT´s have demonstrated better power-frequency performances than other devices using smaller band gap semiconductor materials. Studies have already been realized to evaluate the impact of GaN-based devices at the system level. In this paper, we present the design and the realization of broadband power amplifiers, low noise amplifiers and power switches for future generation of TR-RX modules. These functions are based on the AlGaN/GaN HEMT technology developed at Alcatel-Thales III-V Lab.

Keywords

HEMT integrated circuits; III-V semiconductors; UHF power amplifiers; aluminium compounds; gallium compounds; low noise amplifiers; power semiconductor switches; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN HEMT technology; GaN-based HEMT; L-band; TR-RX modules; broadband AlGaN/GaN high power amplifiers; low noise amplifiers; power switches; power-frequency performances; robust LNA; smaller band gap semiconductor materials; Aluminum gallium nitride; Broadband amplifiers; Gallium nitride; HEMTs; High power amplifiers; L-band; Low-noise amplifiers; Photonic band gap; Robustness; Semiconductor materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European

Conference_Location

Rome

Print_ISBN

978-1-4244-4749-7

Type

conf

Filename

5296369