A W-band MMIC amplifier using 70-nm gate length InP HEMT technology

Author

Malmkvist, Mikael ; Mellberg, Anders ; Grahn, Jan

Author_Institution

Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden

fYear

2005

fDate

3-4 Oct. 2005

Firstpage

165

Lastpage

168

Abstract

InP HEMT transistors using 70-nm gate length have been fabricated and modeled. Two different epitaxial structures have been tested based on either single-or composite InGaAs channel. The composite-channel HEMT exhibited significantly higher maximum transconductance, 1370 mS/mm, compared to 860 mS/mm for the single-channel HEMT whereas f/sub 1/ (f/sub max/) was approximately the same, 190 [260] GHz, and 200 (320) GHz, respectively. A W-band microstrip MMIC amplifier using 70-nm gate length InP HEMT technology has been designed and fabricated for the single-channel structure. The one-stage amplifier exhibited a gain of 8 dB at 94 GHz.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; gallium arsenide; indium compounds; microstrip circuits; millimetre wave amplifiers; 190 GHz; 200 GHz; 260 GHz; 320 GHz; 8 dB; 94 GHz; InGaAs; InP; W-band microstrip MMIC amplifier; composite-channel HEMT; epitaxial structures; gate length HEMT technology; transconductance; Gallium arsenide; HEMTs; Indium gallium arsenide; Indium phosphide; MMICs; Microstrip; Microwave technology; Scanning electron microscopy; Semiconductor process modeling; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European

Conference_Location

Paris

Print_ISBN

88-902012-0-7

Type

conf

Filename

1637176