A simple technique for measuring the thermal impedance and the thermal resistance of HBTs

Author

Lonac, J.A. ; Santarelli, A. ; Melczarsky, I. ; Filicori, F.

Author_Institution

Dept. of Electron., Bologna Univ., Italy

fYear

2005

fDate

3-4 Oct. 2005

Firstpage

197

Lastpage

200

Abstract

This paper presents a new and simple method for characterizing the thermal behavior of heterojunction bipolar transistors, based on DC, AC and low frequency small signal measures of H (hybrid) parameters. Static characterization of the thermal behavior is achieved through the calculation of a thermal resistance, while a thermal impedance is used to describe thermal dynamic behavior. Validation results for the method obtained from both simulations and experimental data are included in the paper for a 10/spl times/2/spl times/40 /spl mu/m InGaP/GaAs power HBT.

Keywords

III-V semiconductors; electric reactance measurement; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; power bipolar transistors; HBT; InGaP-GaAs; heterojunction bipolar transistors; thermal behavior; thermal dynamic behavior; thermal impedance; thermal resistance; Cutoff frequency; Electrical resistance measurement; Heterojunction bipolar transistors; Impedance measurement; Power amplifiers; Pulse amplifiers; Pulse measurements; Temperature; Thermal resistance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European

Conference_Location

Paris

Print_ISBN

88-902012-0-7

Type

conf

Filename

1637184