InGaP/GaAs/AlGaAs power DHBT with enhanced linearity near saturation region

Author

Oka, Tohru ; Fujita, Koichiro ; Yamashita, Masaharu ; Twynam, John K. ; Sakuno, Keiichi

Author_Institution

Devices Technol. Res. Lab., Sharp Corp., Nara

fYear

2005

fDate

3-4 Oct. 2005

Firstpage

205

Lastpage

208

Abstract

This paper describes InGaP/GaAs/AlGaAs power DHBTs with the enhanced linearity near saturation output regions. The DHBT, having compositionally graded AlGaAs collector layers with a delta-doped layer, effectively improved the nonlinearity of the base-collector capacitance near the knee voltage and, consequently, reduced the distortion at near saturated output power levels. The power DHBT achieved an improvement in linear output power and PAE of 0.7 dBm and 2.5%, respectively, compared to the conventional SHBT, and exhibited an output power of 21.1 dBm and a PAE of 33.5% at an EVM of 5%, measured with 54 Mbps 64-QAM-OFDM signals of 5.25 GHz at a supply voltage of 3.3 V

Keywords

III-V semiconductors; aluminium compounds; capacitance; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; power bipolar transistors; semiconductor doping; semiconductor thin films; 2.5 percent; 3.3 V; 33.5 percent; 5.25 GHz; 54 Mbps 64-QAM-OFDM signals; EVM; InGaP-GaAs-AlGaAs; InGaP/GaAs/AlGaAs power DHBT; PAE; SHBT; base-collector capacitance nonlinearity; compositionally graded AlGaAs collector layers; delta-doped layer; enhanced linearity; knee voltage; linear output power; near saturated output power levels; saturation region; supply voltage; Capacitance; DH-HEMTs; Gallium arsenide; Heterojunction bipolar transistors; Knee; Linearity; Power amplifiers; Power generation; Voltage; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European

Conference_Location

Paris

Print_ISBN

88-902012-0-7

Type

conf

Filename

1637186