A wideband balanced AlGaN/GaN HEMT MMIC low noise amplifier for transceiver front-ends

Author

Seo, Sanghyun ; Pavlidis, Dimitris ; Moon, Jeong-sun

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

2005

fDate

3-4 Oct. 2005

Firstpage

225

Lastpage

228

Abstract

A 3-16 GHz wideband AlGaN/GaN high electron mobility transistor (HEMT) low noise amplifier (LNA), using balanced configuration with a coplanar waveguide (CPW) Lange coupler, is designed and fabricated. The LNA shows a minimum noise figure of 4 dB with associated gain of 20 dB and gain flatness of +/- 3 dB across the 3-16 GHz frequency range. This balanced GaN LNA is suitable for transceiver front-ends due to the low input/output VSWR, high stability and redundancy, as well as, high power handling capability of GaN HEMTs. The design, fabrication and characterization results of the GaN HEMT balanced amplifier are described together with the details of design and characteristics of the individual LNAs and the CPW coupler.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; coplanar waveguides; gallium compounds; low noise amplifiers; wide band gap semiconductors; wideband amplifiers; 20 dB; 3 to 16 GHz; 4 dB; AlGaN-GaN; CPW couplers; LNA; coplanar waveguide; high electron mobility transistor; transceiver front-ends; wideband balanced HEMT MMIC low noise amplifier; Aluminum gallium nitride; Broadband amplifiers; Coplanar waveguides; Gain; Gallium nitride; HEMTs; Low-noise amplifiers; MMICs; MODFETs; Transceivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European

Conference_Location

Paris

Print_ISBN

88-902012-0-7

Type

conf

Filename

1637191