Noise assessment of AlGaN/GaN HEMTs on Si or SiC substrates: application to X-band low noise amplifiers

Author

De Jaeger, J.C. ; Delage, S.L. ; Dambrine, G. ; Di Forte Poisson, M.A. ; Hoel, V. ; Lepilliet, S. ; Grimbert, B. ; Morvan, E. ; Mancuso, Y. ; Gauthier, G. ; Lefrancois, A. ; Cordier, Y.

Author_Institution

Lille Univ., Villeneuve d´´Ascq, France

fYear

2005

fDate

3-4 Oct. 2005

Firstpage

229

Lastpage

232

Abstract

This study regards the low noise properties of X-band GaN-based LNAs as well as its associated robustness. Devices are processed on epilayers grown on SiC or Si substrates. The HEMTs present very low noise properties with NF/sub min/ and G/sub ass/ close to 1 dB and 13 dB at 12 GHz. The robustness tests show that the component withstands power level up to 34 dBm. A two-stages X-band LNA is fabricated showing a noise figure of 1.7 dB with a gain of 20 dB at 10 GHz.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; low noise amplifiers; microwave amplifiers; silicon compounds; wide band gap semiconductors; 1.7 dB; 10 GHz; 12 GHz; 20 dB; AlGaN-GaN; HEMT; LNA; SiC; X-band low noise amplifiers; noise assessment; Aluminum gallium nitride; Gallium nitride; HEMTs; Low-noise amplifiers; MODFETs; Noise figure; Noise measurement; Noise robustness; Silicon carbide; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European

Conference_Location

Paris

Print_ISBN

88-902012-0-7

Type

conf

Filename

1637192