A microstrip X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate

Author

van Raay, F. ; Quay, R. ; Kiefer, R. ; Fehrenbach, W. ; Bronner, W. ; Kuri, M. ; Benkhelifa, F. ; Massler, H. ; Müller, S. ; Mikulla, M. ; Schlechtweg, M. ; Weimann, G.

Author_Institution

Fraunhofer Inst. of Appl. Solid-State Phys., Freiberg, Germany

fYear

2005

fDate

3-4 Oct. 2005

Firstpage

233

Lastpage

236

Abstract

A two-stage high-power amplifier MMIC was realized with a chip size of 4.5 mm /spl times/ 3 mm operating between 8 GHz and 10 GHz based on a fully integrated microstrip AlGaN/GaN HEMT technology on s.i. SiC substrate. The MMIC device delivers a maximum pulsed output power of 8.9 W (39.5 dBm) at 8.5 GHz at V/sub DS/ = 31 V, 10 % duty cycle, and more than 6 dB gain compression level, and features a linear gain in excess of 20 dB.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; gallium compounds; microstrip circuits; semiconductor device models; silicon compounds; wide band gap semiconductors; 10 GHz; 31 V; 8 GHz; 8.5 GHz; 8.9 W; AlGaN-GaN; HEMT technology; SiC; microstrip X-band power amplifier; power amplifier MMIC; Aluminum gallium nitride; Gain; Gallium nitride; HEMTs; High power amplifiers; MMICs; Microstrip; Power amplifiers; Pulse amplifiers; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European

Conference_Location

Paris

Print_ISBN

88-902012-0-7

Type

conf

Filename

1637193