A fully integrated SiGe low phase noise push-push VCO for 82 GHz

Author

Wanner, Robert ; Schäfer, Herbert ; Lachner, Rudolf ; Olbrich, Gerhard R. ; Russer, Peter

Author_Institution

Lehrstuhl fur Hochfrequenztechnik, Technische Univ. Munchen, Germany

fYear

2005

fDate

3-4 Oct. 2005

Firstpage

249

Lastpage

252

Abstract

We present a fully monolithically integrated push-push oscillator fabricated in a production-near SiGe:C bipolar technology. The oscillator output frequency can be varactor tuned from 80.6 GHz to 82.4 GHz. In this frequency range the measured output power is 3.5 /spl plusmn/ 0.4 dB m while the measured single sideband phase noise is less than -105 dBc/Hz at 1 MHz offset frequency. To our knowledge this phase noise level is the lowest one reported in literature so far for an VCO in this frequency band. The transistors used in this work show a maximum transit frequency f/sub T/ = 200 GHz and a maximum frequency of oscillation f/sub max/ = 275 GHz. For the passive circuitry transmission-line components, MIM-capacitors and integrated resistors are used.

Keywords

Ge-Si alloys; MIM devices; bipolar MIMIC; carbon; millimetre wave oscillators; passive networks; phase noise; semiconductor materials; varactors; voltage-controlled oscillators; 1 MHz; 200 GHz; 275 GHz; 80.6 to 82.4 GHz; MIM-capacitors; SiGe:C; bipolar technology; integrated low phase noise push-push VCO; integrated resistors; maximum transit frequency; monolithically integrated push-push oscillator fabrication; passive circuitry transmission-line components; sideband phase noise; varactor; Frequency measurement; Germanium silicon alloys; Noise measurement; Phase measurement; Phase noise; Power generation; Power measurement; Silicon germanium; Varactors; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European

Conference_Location

Paris

Print_ISBN

88-902012-0-7

Type

conf

Filename

1637197