Title :
ESD characteristics of GaAs versus silicon diode
Author :
Park, Changkun ; Yun, Seok-Oh ; Han, Jeonghu ; Cheon, Sang-Hoon ; Park, Jae-Woo ; Hong, Songcheol
Author_Institution :
Dept. of EECS, Korea Adv. Inst. of Sci. & Technol., Daejeon
Abstract :
The ESD characteristics of GaAs diode are compared with those of silicon diode. The ESD diodes are designed and implemented using GaAs HBT technology and 0.25 mum CMOS technology. The differences of ESD characteristics between GaAs diode and silicon diode are investigated, simulated and measured. Because the thermal characteristics of GaAs are different from those of silicon, the ESD characteristics of GaAs device are different from those of silicon device
Keywords :
CMOS integrated circuits; III-V semiconductors; electrostatic discharge; elemental semiconductors; gallium arsenide; semiconductor device models; semiconductor diodes; silicon; thermal conductivity; 0.25 mum CMOS technology; ESD; GaAs; GaAs diode; HBT technology; Si; electrostatic discharge; silicon diode; thermal characteristics; Biological system modeling; CMOS technology; Electrostatic discharge; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Semiconductor diodes; Silicon devices; Temperature; Thermal conductivity;
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7
